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Part Datasheet Search > MOSFETs > ROHM Semiconductor > SCT2H12NYTB Datasheet PDF
SCT2H12NYTB
$ 3.674
SCT2H12NYTB Datasheet PDF (16 Pages)
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SCT2H12NYTB Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Positions
2 Position
Drain to Source Resistance (on) (Rds)
1.15 Ω
Polarity
N-CH
Power Dissipation
44 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
1700 V
Continuous Drain Current (Ids)
4A
Rise Time
21 ns
Input Capacitance (Ciss)
184pF @800V(Vds)
Fall Time
74 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
44W (Tc)

SCT2H12NYTB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
175℃ (TJ)

SCT2H12NYTB Documents

ROHM Semiconductor
16 Pages / 0.83 MByte
ROHM Semiconductor
15 Pages / 1.07 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte

SCT2H12 Documents

ROHM Semiconductor
Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V
ROHM Semiconductor
TO-268L N-CH 1700V 4A
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