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RQ6E055BNTCR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

MOSFET N-CH 30V 5.5A TSMT

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RQ6E055BNTCR Datasheet PDF (12 Pages)

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RQ6E055BNTCR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOT-23-6

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.019 Ω

Polarity

N-Channel

Power Dissipation

1.25 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Rise Time

12 ns

Input Capacitance (Ciss)

355pF @15V(Vds)

Fall Time

7 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.25W (Ta)

RQ6E055BNTCR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

RQ6E055BNTCR Environmental

RQ6E055BNTCR Function Overview

RQ6E055BNTCR Documents

RQ6E055BNTCR Other Datasheet PDF

ROHM Semiconductor

12 Pages / 2.64 MByte

RQ6E055 Documents

RQ6E055BNTCR Datasheet PDF

ROHM Semiconductor

MOSFET N-CH 30V 5.5A TSMT

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