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RDN100N20
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RDN100N20 Datasheet PDF (4 Pages)
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RDN100N20 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
360 mΩ
Power Dissipation
35 W
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
15.0 A
Rise Time
29 ns
Input Capacitance (Ciss)
543pF @10V(Vds)
Input Power (Max)
35 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
35W (Tc)

RDN100N20 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Length
10 mm
Size-Width
4.5 mm
Size-Height
8 mm
Operating Temperature
150℃ (TJ)

RDN100N20 Documents

ROHM Semiconductor
4 Pages / 0.04 MByte
ROHM Semiconductor
5 Pages / 0.08 MByte
ROHM Semiconductor
1 Pages / 0.14 MByte

RDN100 Documents

ROHM Semiconductor
MOSFET Trans MOSFET N-CH 200V 10A 3Pin(3+Tab) TO-220FN Bulk
ROHM Semiconductor
Mosfet n-Ch 200V 10A To-220fn
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