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QS8K13TCR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

Transistors

Case Package:

SMD-8

Description:

Mosfet, Dual n-Ch, 30V, 6A, Tsmt

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QS8K13TCR Datasheet PDF (12 Pages)

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QS8K13TCR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SMD-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.02 Ω

Polarity

Dual N-Channel

Power Dissipation

1.5 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Rise Time

40 ns

Input Capacitance (Ciss)

390pF @10V(Vds)

Input Power (Max)

550 mW

Fall Time

7 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1500 mW

QS8K13TCR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

QS8K13TCR Environmental

QS8K13TCR Function Overview

QS8K13TCR Documents

QS8K13TCR Other Datasheet PDF

ROHM Semiconductor

12 Pages / 1.44 MByte

QS8K13 Documents

QS8K13TCR Datasheet PDF

ROHM Semiconductor

Mosfet, Dual n-Ch, 30V, 6A, Tsmt

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