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QH8MA2TCR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

Transistors

Case Package:

SMD-8

Description:

MOSFET N/P-CH 30V 4.5A/3A TSMT8

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QH8MA2TCR Datasheet PDF (20 Pages)

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QH8MA2TCR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

SMD-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.025 Ω

Polarity

N-Channel, P-Channel

Power Dissipation

1.5 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Input Capacitance (Ciss)

365pF @10V(Vds)

Input Power (Max)

1.25 W

Operating Temperature (Max)

150 ℃

QH8MA2TCR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

150℃ (TJ)

QH8MA2TCR Environmental

QH8MA2TCR Function Overview

QH8MA2TCR Documents

QH8MA2TCR Other Datasheet PDF

ROHM Semiconductor

20 Pages / 4.21 MByte

QH8MA2 Documents

QH8MA2TCR Datasheet PDF

ROHM Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

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