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Part Datasheet Search > MOSFETs > NXP > PMGD280UN,115 Datasheet PDF
PMGD280UN,115
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PMGD280UN,115 Datasheet PDF (14 Pages)
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PMGD280UN,115 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SOT-323-6
Number of Channels
2 Channel
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.28 Ω
Polarity
Dual N-Channel
Power Dissipation
400 mW
Threshold Voltage
700 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
870 mA
Rise Time
10 ns
Input Capacitance (Ciss)
45pF @20V(Vds)
Input Power (Max)
400 mW
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
0.4 W

PMGD280UN,115 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

PMGD280UN,115 Documents

NXP
14 Pages / 0.2 MByte
NXP
206 Pages / 0.21 MByte
NXP
1 Pages / 0.13 MByte

PMGD280 Documents

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Transistor: N-MOSFET x2; unipolar; 20V; 550mA; 400mW; SOT363
NXP
TSSOP N-CH 20V 0.87A
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Trans MOSFET N-CH 20V 0.87A 6Pin TSSOP
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