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PHM30NQ10T,518 Datasheet PDF - NXP

Manufacturer:

NXP

Category:

MOSFETs

Case Package:

HVSON-8

Description:

HVSON N-CH 100V 37.6A

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PHM30NQ10T,518 Datasheet PDF (13 Pages)

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PHM30NQ10T,518 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

HVSON-8

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

20 mΩ

Polarity

N-CH

Power Dissipation

60 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

37.6A

Rise Time

11 ns

Input Capacitance (Ciss)

3600pF @25V(Vds)

Fall Time

51 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

62.5W (Tc)

PHM30NQ10T,518 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Size-Length

6 mm

Size-Width

5 mm

Size-Height

0.85 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

PHM30NQ10T,518 Environmental

PHM30NQ10T,518 Function Overview

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13 Pages / 0.26 MByte

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PHM30NQ10T,518 Datasheet PDF

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HVSON N-CH 100V 37.6A

PHM30NQ10T Datasheet PDF

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HVSON N-CH 100V 37.6A

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