PC28F00AP33EFA Datasheet PDF - Micron

●The PC28F00AP33EFA is a 1GB NOR Flash Memory provides high performance on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the RCR (read configuration register) enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast buffer program and erase operations. The device features a 512-word buffer to enable optimum programming performance, which can improve system programming throughput time significantly to 1.46Mbyte/s. Designed for low-voltage systems, P33-65nm device supports read operations with VCC at 3V and erase and program operations with VPP at 3/9V.

● High performance - 95ns initial access time

● Symmetrically-blocked architecture

● Blank check to verify an erased block

● Continuous synchronous read current - 21mA typical/24mA maximum at 52MHz

● Enhanced security

● Absolute write protection - VPP = VSS

● Power-transition erase/program lockout

● Individual zero-latency block locking

● Individual block lock-down capability

● Numonyx® Flash data integrator optimized

● Basic command set and extended function Interface (EFI) command set compatible

● Common flash interface capable

● Minimum 100000 erase cycles