P4SMA480AHE3_A/I Datasheet PDF - Vishay Intertechnology

* Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 400W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle): 0.01% (300W above 91V) * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ * AEC-Q101 qualified * IFSM is 40

TVS 300W 480V 5% UNIDIR SMA

TVS 300W 480V 5% UNIDIR SMA

* Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 400W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle): 0.01% (300W above 91V) * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ * AEC-Q101 qualified * IFSM is 40

Diode TVS Single Uni-Dir 408V 400W 2Pin DO-214AC Plastic T/R

Trans Voltage Suppressor Diode, 300W, 408V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

Trans Voltage Suppressor Diode, 300W, 408V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN