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NTJD4152PT1
$ 0.177
NTJD4152PT1 Datasheet PDF (5 Pages)
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NTJD4152PT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-20.0 V
Current Rating
-880 mA
Case/Package
SOT-363
Drain to Source Resistance (on) (Rds)
600 mΩ
Polarity
P-Channel
Power Dissipation
272 mW
Input Capacitance
155 pF
Gate Charge
2.20 nC
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
880 mA
Input Capacitance (Ciss)
155pF @20V(Vds)
Input Power (Max)
272 mW

NTJD4152PT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTJD4152PT1 Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
583 Pages / 1.54 MByte
ON Semiconductor
26 Pages / 0.08 MByte

NTJD4152 Documents

ON Semiconductor
Small Signal MOSFET -20V -0.88A 260mOhm Dual P-Channel SC88 with ESD Protection, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
ON Semiconductor
Trans MOSFET P-CH 20V 0.88A 6Pin SC-88 T/R
ON Semiconductor
SC-88P-CH 20V 0.88A
ON Semiconductor
SC-88-6/SC-70-6/SOT-363-6 Dual P 20V 0.88A 260mΩ
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