NIF9N05ACLT1G Datasheet PDF - ON Semiconductor

●Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection

●Features

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● Diode Clamp Between Gate and Source

● ESD Protection - HBM 5000 V

● Active Over - Voltage Gate to Drain Clamp

● Scalable to Lower or Higher RDS(on)

● Internal Series Gate Resistance