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Part Datasheet Search > BJTs > California Eastern Laboratories > NE68139-T1-A Datasheet PDF
NE68139-T1-A
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NE68139-T1-A Datasheet PDF (1 Pages)
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NE68139-T1-A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
9000 MHz
Number of Pins
4 Pin
Case/Package
TO-253-4
Polarity
NPN
Power Dissipation
200 mW
Breakdown Voltage (Collector to Emitter)
10 V
Gain
13.5 dB
hFE Min
50 @20mA, 8V
Input Power (Max)
200 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200 mW

NE68139-T1-A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.5 mm
Size-Height
1.1 mm
Operating Temperature
150℃ (TJ)

NE68139-T1-A Documents

California Eastern Laboratories
1 Pages / 0.04 MByte
California Eastern Laboratories
24 Pages / 1.47 MByte

NE68139T1 Documents

California Eastern Laboratories
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RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FREE, PLASTIC PACKAGE-4
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