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Part Datasheet Search > Operational Amplifiers(General Purpose) > ON Semiconductor > NE5230DR2G Datasheet PDF
NE5230DR2G
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NE5230DR2G Datasheet PDF (18 Pages)
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NE5230DR2G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Halogen Free Status
Halogen Free
Supply Current
1.1 mA
Number of Circuits
1 Circuit
Number of Channels
1 Channel
Power Dissipation
500 mW
Common Mode Rejection Ratio
85 dB
Gain Bandwidth Product
600 kHz
Input Offset Voltage
400 µV
Input Bias Current
40 nA
Operating Temperature (Max)
70 ℃
Operating Temperature (Min)
0 ℃
Gain Bandwidth
600 kHz
Power Dissipation (Max)
500 mW
Minimum CMRR Range
85 dB
Supply Voltage (Max)
15 V
Supply Voltage (Min)
1.8 V

NE5230DR2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
0℃ ~ 70℃

NE5230DR2G Documents

ON Semiconductor
18 Pages / 0.2 MByte
ON Semiconductor
19 Pages / 0.31 MByte

NE5230DR2 Documents

ON Semiconductor
IC OPAMP GP 600kHz RRO 8SOIC
ON Semiconductor
OP Amp Single GP ±7.5V/15V 8Pin SOIC N T/R
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