NDB5060L Datasheet PDF - Fairchild

●General Description

●These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

●Features

●■ 26 A, 60 V. RDS(ON) = 0.05 W @ VGS= 5 V

●                   RDS(ON) = 0.035 W @ VGS= 10 V.

●■ Critical DC electrical parameters specified at elevated temperature.

●■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

●■ 175°C maximum junction temperature rating.

●■ High density cell design for extremely low RDS(ON).

●■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.