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Part Datasheet Search > IGBTs > IXYS Semiconductor > MWI75-12E8 Datasheet PDF
MWI75-12E8
$ 121.37

MWI75-12E8 Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
IGBTs
Case Package:
E-3
Description:
Trans IGBT Module N-CH 1200V 130A 500000mW 33Pin Case E-3
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MWI75-12E8 Datasheet PDF (4 Pages)
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MWI75-12E8 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
33 Pin
Case/Package
E-3
Power Dissipation
500000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
5.7nF @25V
Input Power (Max)
500 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
500000 mW

MWI75-12E8 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Height
17 mm
Operating Temperature
-40℃ ~ 125℃ (TJ)

MWI75-12E8 Documents

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