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MTD6N20ET4
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MTD6N20ET4 Datasheet PDF (9 Pages)
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MTD6N20ET4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
6.00 A
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
460 mΩ
Polarity
N-Channel
Power Dissipation
1.75W (Ta), 50W (Tc)
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
6.00 A
Rise Time
29.0 ns
Input Capacitance (Ciss)
480pF @25V(Vds)
Input Power (Max)
1.75 W
Power Dissipation (Max)
1.75W (Ta), 50W (Tc)

MTD6N20ET4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

MTD6N20ET4 Documents

ON Semiconductor
9 Pages / 0.14 MByte
ON Semiconductor
19 Pages / 0.26 MByte
ON Semiconductor
12 Pages / 0.1 MByte

MTD6N20 Documents

ON Semiconductor
ON Semiconductor
DPAK N-CH 200V 6A
ON Semiconductor
DPAK N-CH 200V 6A
Motorola
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7Ω
ON Semiconductor
Trans MOSFET N-CH 200V 6A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
DPAK N-CH 200V 6A
Motorola
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Motorola
6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET
ON Semiconductor
6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
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