MT46V16M16P-6 Datasheet PDF - Micron

●MT46V64M4 – 16 MEG x 4 x 4 BANKS

●MT46V32M8 – 8 MEG x 8 x 4 BANKS

●MT46V16M16 – 4 MEG x 16 x 4 BANKS

●General Description

●The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad bank DRAM.

●Features

●•VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

●• Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (x16 has two – one per byte)

●• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

●• Differential clock inputs (CK and CK#)

●• Commands entered on each positive CK edge

●• DQS edge-aligned with data for READs; center-aligned with data for WRITEs

●• DLL to align DQ and DQS transitions with CK

●• Four internal banks for concurrent operation

●• Data mask (DM) for masking write data (x16 has two – one per byte)

●• Programmable burst lengths: 2, 4, or 8

●• Auto Refresh and Self Refresh Modes

●• Longer-lead TSOP for improved reliability (OCPL)

●• 2.5V I/O (SSTL_2 compatible)

●• Concurrent auto precharge option supported

●•tRAS lockout supported (tRAP =tRCD)