$ 1.958

MSMLJ10CAE3TR Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Case Package:

SMC

Description:

DO-214AB 10V 3000W

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MSMLJ10CAE3TR Datasheet (8 Pages)

MSMLJ10CAE3TR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

2 Pin

Case/Package

SMC

Clamping Voltage

17 V

Max Repetitive Reverse Voltage (Vrrm)

10V

Test Current

1 mA

Peak Pulse Power

3000 W

Reverse Breakdown Voltage

11.1 V

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

View Datasheet >

MSMLJ10CAE3TR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

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MSMLJ10CAE3TR Environmental

MSMLJ10CAE3TR Export Classifications

MSMLJ10CAE3TR Function Overview

MSMLJ10CAE3TR Documents

MSMLJ10CAE3TR Datasheet

Microsemi

8 Pages / 0.45 MByte

MSMLJ10CAE3 Documents

MSMLJ10CAE3 Datasheet PDF

Microsemi

DO-214AB 10V 3000W

MSMLJ10CAE3 Datasheet PDF

Microchip

TVS DIODE 10V 17V DO214AB

MSMLJ10CAE3TR Datasheet PDF

Microsemi

DO-214AB 10V 3000W

MSMLJ10CAE3/TR Datasheet PDF

Microsemi

Sleep easy, never worry about surges again with this MSMLJ10CAE3TR TVS diode from Microsemi. Its test current is 1 mA. This device&s;s maximum clamping voltage is 17 V and minimum breakdown voltage is 11.1 V. Its peak pulse power dissipation is 3000 W. Its maximum leakage current is 5 μA. This TVS diode has an operating temperature range of -65 °C to 150 °C. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment.

MSMLJ10CAE3/TR Datasheet PDF

Microchip

TVS

MSMLJ10CAE3TR Datasheet PDF

Microchip

TVS Diode Single Bi-Dir 10V 3KW 2-Pin SMC T/R