MJE5851G Datasheet PDF - ON Semiconductor

●This PNP MJE5851G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V.