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Part Datasheet Search > BJTs > ON Semiconductor > MJE371G Datasheet PDF
MJE371G
$ 0.323
MJE371G Datasheet PDF (3 Pages)
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MJE371G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
-4.00 A
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
4A
hFE Min
40 @1A, 1V
Input Power (Max)
40 W
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
4000 mW

MJE371G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Width
2.66 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJE371G Documents

ON Semiconductor
3 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
11 Pages / 1.83 MByte

MJE371 Documents

ON Semiconductor
TO-225-3 PNP 40V 4A
Central Semiconductor
Trans GP BJT PNP 40V 4A 3Pin TO-126 Box
Motorola
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40W
Advanced Semiconductor
Power Bipolar Transistor, 4A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Semelab
4A, 40V, PNP, Si, POWER TRANSISTOR, TO-127, TO-127, 3 PIN
ST Microelectronics
4A, 40V, PNP, Si, POWER TRANSISTOR, TO-126
TI
PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
Inchange Semiconductor
Transistor
TT Electronics Resistors
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-127, Plastic/Epoxy, 3 Pin, TO-127, 3 PIN
ON Semiconductor
TO-225 PNP 40V 4A
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