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Part Datasheet Search > BJTs > Fairchild > MJE200STU Datasheet PDF
MJE200STU
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MJE200STU Datasheet PDF (4 Pages)
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MJE200STU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
65 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
25.0 V
Current Rating
5.00 A
Case/Package
TO-126-3
Polarity
NPN
Power Dissipation
15 W
Gain Bandwidth Product
65 MHz
Breakdown Voltage (Collector to Emitter)
25 V
Continuous Collector Current
5A
hFE Min
45 @2A, 1V
hFE Max
180
Input Power (Max)
15 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
15000 mW

MJE200STU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11.2 mm
Operating Temperature
150℃ (TJ)

MJE200STU Documents

Fairchild
4 Pages / 0.04 MByte
Fairchild
5 Pages / 0.04 MByte

MJE200 Documents

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TO-225-3 NPN 25V 5A
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5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15W
Samsung
40V, 5A, NPN epitaxial silicon transistor
ST Microelectronics
5A, 25V, NPN, Si, POWER TRANSISTOR, TO-126
National Semiconductor
TRANSISTOR,BJT,NPN,25V V(BR)CEO,5A I(C),TO-126
Inchange Semiconductor
Transistor
TT Electronics Resistors
Transistor
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