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Part Datasheet Search > BJTs > ON Semiconductor > MJE180STU Datasheet PDF
MJE180STU
$ 0.249
MJE180STU Datasheet PDF (4 Pages)
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MJE180STU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Case/Package
TO-126-3
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
50 @100mA, 1V
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
12.5 W

MJE180STU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
150℃ (TJ)

MJE180STU Documents

ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
6 Pages / 0.14 MByte
ON Semiconductor
4 Pages / 0.04 MByte

MJE180 Documents

ON Semiconductor
TRANS NPN 40V 3A TO-126
Central Semiconductor
Trans GP BJT NPN 40V 3A 3Pin TO-126 Box
Fairchild
Die Trans Npn 40V Small Signal
NTE Electronics
t-Npn Si Af Po
Mospec
POWER TRANSISTORS(3A,40-80V,12.5W)
ST Microelectronics
3A, 40V, NPN, Si, POWER TRANSISTOR, TO-126
Continental Device
12.5W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 3A Ic, 50 - 250 hFE.
Motorola
5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
Samsung
60V, 3A, NPN epitaxial silicon transistori
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