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Part Datasheet Search > BJTs > ON Semiconductor > MJD210G Datasheet PDF
MJD210G
$ 0.277
MJD210G Datasheet PDF (3 Pages)
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MJD210G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
65 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-25.0 V
Current Rating
-5.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
1.4 W
Gain Bandwidth Product
65 MHz
Breakdown Voltage (Collector to Emitter)
25 V
Thermal Resistance
10℃/W (RθJC)
Continuous Collector Current
5A
hFE Min
45 @2A, 1V
Input Power (Max)
1.4 W
DC Current Gain (hFE)
3
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1400 mW

MJD210G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃

MJD210G Documents

ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
8 Pages / 0.14 MByte

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