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MJ14003G
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MJ14003G Datasheet PDF (5 Pages)
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MJ14003G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-204-2
Polarity
PNP
Power Dissipation
300 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
60A
hFE Min
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃

MJ14003G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tray
Size-Length
38.86 mm
Size-Width
26.67 mm
Size-Height
8.51 mm

MJ14003G Documents

ON Semiconductor
5 Pages / 0.08 MByte

MJ14003 Documents

ON Semiconductor
Power 60A 80V Discrete PNP
Motorola
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300W
Solid State Devices
Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Semelab
70A, 80V, PNP, Si, POWER TRANSISTOR, TO-204AE, HERMETIC SEALED, METAL, TO-3, 2 PIN
Advanced Semiconductor
Power Bipolar Transistor, 60A I(C), 1-Element, PNP, Silicon, Metal, 2 Pin, MODIFIED TO-3, 2 PIN
TT Electronics Resistors
Power Bipolar Transistor, 70A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
ON Semiconductor
TO-204 PNP 80V 60A
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