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Part Datasheet Search > MOSFETs > ON Semiconductor > MGSF1N03LT3G Datasheet PDF
MGSF1N03LT3G
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MGSF1N03LT3G Datasheet PDF (5 Pages)
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MGSF1N03LT3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
1.60 A
Case/Package
SOT-23-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
125 mΩ
Polarity
N-Channel
Power Dissipation
730 mW
Input Capacitance
140 pF
Gate Charge
6.00 µC
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
2.10 A, 1.60 A
Rise Time
1 ns
Input Capacitance (Ciss)
140pF @5V(Vds)
Fall Time
1 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
420mW (Ta)

MGSF1N03LT3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MGSF1N03LT3G Documents

ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
11 Pages / 0.21 MByte

MGSF1N03LT3 Documents

ON Semiconductor
SOT-23 N-CH 30V 2.8A
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
ON Semiconductor
SOT-23 N-CH 30V 2.8A
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