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Part Datasheet Search > MOSFETs > ON Semiconductor > MGSF1N03LT3 Datasheet PDF
MGSF1N03LT3
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MGSF1N03LT3 Datasheet PDF (5 Pages)
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MGSF1N03LT3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
30.0 V
Current Rating
1.60 A
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
125 mΩ
Polarity
N-Channel
Power Dissipation
420mW (Ta)
Input Capacitance
140 pF
Gate Charge
6.00 µC
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
2.10 A
Input Capacitance (Ciss)
140pF @5V(Vds)
Power Dissipation (Max)
420mW (Ta)

MGSF1N03LT3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape
Operating Temperature
-55℃ ~ 150℃ (TJ)

MGSF1N03LT3 Documents

ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
4 Pages / 0.06 MByte

MGSF1N03 Documents

ON Semiconductor
MOSFET, Power; Single N-Ch; VDSS 30VDC; RDS(ON) 0.08Ω; ID 1.6A; SOT-23 (TO-236)
ON Semiconductor
Trans MOSFET N-CH 30V 2.8A 3Pin SOT-23 T/R
ON Semiconductor
SOT-23 N-CH 30V 2.8A
ON Semiconductor
SOT-23 N-CH 30V 2.8A
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
ON Semiconductor
SOT-23-3 N-CH 30V 1.6A 145mΩ
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Motorola
750mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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