$ 98.816

MBR400100CTR Datasheet PDF - GeneSiC Semiconductor

Manufacturer:

GeneSiC Semiconductor

Category:

Diode Arrays

Case Package:

Twin Tower

Description:

Diode Schottky 100V 400A 3Pin Twin Tower

Pictures:

3D Model

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Footprint

Pinout

Product Pictures

MBR400100CTR Datasheet PDF (3 Pages)

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MBR400100CTR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

2 Pin

Case/Package

Twin Tower

Forward Voltage

840mV @200A

Forward Current

200 A

Max Forward Surge Current (Ifsm)

3 kA

Maximum Forward Voltage (Max)

840 mV

Forward Current (Max)

400 A

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature

-55℃ ~ 150℃

MBR400100CTR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Each

Operating Temperature

-55℃ ~ 150℃

MBR400100CTR Environmental

MBR400100CTR Function Overview

MBR400100CTR Documents

MBR400100CTR Other Datasheet PDF

GeneSiC Semiconductor

3 Pages / 0.39 MByte

MBR400100CTR Drawing Diagrams

GeneSiC Semiconductor

1 Pages / 0.01 MByte

MBR400100 Documents

MBR400100CT Datasheet PDF

GeneSiC Semiconductor

Diode Schottky 100V 400A 3Pin Twin Tower

MBR400100CTR Datasheet PDF

GeneSiC Semiconductor

Diode Schottky 100V 400A 3Pin Twin Tower

MBR400100CT Datasheet PDF

Microsemi

Schottky PowerMod

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