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Part Datasheet Search > BJTs > Fairchild > KSH31CTF Datasheet PDF
KSH31CTF
$ 0.29

KSH31CTF Datasheet PDF - Fairchild

Manufacturer:
Fairchild
Category:
BJTs
Case Package:
TO-252-3
Description:
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2Pin, DPAK-3
Pictures:
3D Model
Symbol
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Product Pictures
Documentation:
KSH31CTF Datasheet (6 Pages)
Package Outline Dimension on4 Page5 Page
KSH31CTF Application Note (6 Pages)
KSH31CTF Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

KSH31CTF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
3.00 A
Case/Package
TO-252-3
Polarity
NPN
Power Dissipation
1.56 W
Breakdown Voltage (Collector to Base)
100 V
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
3A
hFE Min
10 @3A, 4V
Input Power (Max)
1.56 W
DC Current Gain (hFE)
25
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1560 mW
View Datasheet >

KSH31CTF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.6 mm
Size-Width
6.1 mm
Size-Height
2.3 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

KSH31CTF Documents

KSH31CTF Datasheet
Fairchild
6 Pages / 0.05 MByte
KSH31CTF Other Datasheet PDF
Fairchild
8 Pages / 0.16 MByte
KSH31CTF Application Note
Fairchild
6 Pages / 0.05 MByte
KSH31CTF Other References
Fairchild
1 Pages / 0.13 MByte

KSH31 Documents

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ON Semiconductor
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KSH31CTF Datasheet PDF
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2Pin, DPAK-3
KSH31CTM Datasheet PDF
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KSH31CTF Datasheet PDF
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KSH31C Datasheet PDF
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KSH31TF Datasheet PDF
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KSH31C Datasheet PDF
Samsung
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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