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Part Datasheet Search > BJTs > ON Semiconductor > KSD1616AGTA Datasheet PDF
KSD1616AGTA
$ 0.103

KSD1616AGTA Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
Trans GP BJT NPN 60V 1A 3Pin TO-92 Ammo
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
KSD1616AGTA Datasheet (10 Pages)
Package Outline Dimension on1 Page
KSD1616AGTA Datasheet PDF (10 Pages)
View Datasheet
Click page to view the detail

KSD1616AGTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-226-3
Power Rating
0.75 W
Number of Positions
3 Position
Power Dissipation
750 mW
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
200 @100mA, 2V
hFE Max
600
Input Power (Max)
750 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
750 mW
View Datasheet >

KSD1616AGTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Material
Silicon
Size-Length
4.7 mm
Size-Width
3.93 mm
Size-Height
4.7 mm
Operating Temperature
-55℃ ~ 150℃
View Datasheet >

KSD1616AGTA Documents

KSD1616AGTA Datasheet
ON Semiconductor
10 Pages / 0.09 MByte
KSD1616AGTA Other Datasheet PDF
ON Semiconductor
9 Pages / 1.79 MByte
KSD1616AGTA Drawing Diagrams
ON Semiconductor
1 Pages / 0.01 MByte

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