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Part Datasheet Search > MOSFETs > Microsemi > JANTXV2N6766T1 Datasheet PDF
JANTXV2N6766T1
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JANTXV2N6766T1 Datasheet PDF - Microsemi

Manufacturer:
Microsemi
Category:
MOSFETs
Case Package:
TO-254-3
Description:
TO-254 N-CH 200V 30A
Pictures:
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Documentation:
JANTXV2N6766T1 Datasheet (9 Pages)
Package Outline Dimension on2 Page9 Page
JANTXV2N6766T1 Datasheet PDF (9 Pages)
View Datasheet
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JANTXV2N6766T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-254-3
Polarity
N-CH
Power Dissipation
4W (Ta), 150W (Tc)
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
30A
Power Dissipation (Max)
4W (Ta), 150W (Tc)
View Datasheet >

JANTXV2N6766T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

JANTXV2N6766T1 Documents

JANTXV2N6766T1 Datasheet
Microsemi
9 Pages / 0.94 MByte
JANTXV2N6766T1 Other Datasheet PDF
Microsemi
9 Pages / 0.26 MByte

JANTXV2N6766 Documents

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Infineon
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
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Motorola
30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
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Omnirel Corp
N-channel enhancement mode MOSFET power transistor
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Intersil
30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
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Harris
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
JANTXV2N6766 Datasheet PDF
Vishay Siliconix
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
JANTXV2N6766 Datasheet PDF
Microchip
JANTXV2N6766 Datasheet PDF
Unitrode
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
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