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Part Datasheet Search > BJTs > Microsemi > JANTXV2N2857UB Datasheet PDF
JANTXV2N2857UB
$ 99.675
JANTXV2N2857UB Datasheet PDF (2 Pages)
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JANTXV2N2857UB Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SMD-3
Power Dissipation
200 mW
Breakdown Voltage (Collector to Emitter)
15 V
Gain
21 dB
hFE Min
30 @3mA, 1V
Input Power (Max)
200 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200 mW

JANTXV2N2857UB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

JANTXV2N2857UB Documents

Microsemi
2 Pages / 0.13 MByte
Microsemi
5 Pages / 0.29 MByte

JANTXV2N2857 Documents

Microsemi
RF Small Signal Bipolar Transistor, 0.04A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4
Semicoa Semiconductor
RF Small Signal Bipolar Transistor, 0.04A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4
Microsemi
Trans RF BJT NPN 15V 0.04A
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