JAN4N22 Datasheet PDF - Micropac

●DESCRIPTION

●Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.

●Features:

●• Overall current gain...1.5 typical (4N24)

●• Base lead provided for conventional transistor biasing

●• Rugged package

●• High gain, high voltage transistor

●• +1kV electrical isolation

●Applications:

●• Eliminate ground loops

●• Level shifting

●• Line receiver

●• Switching power supplies

●•Motor control