$ 37.036

IXYN30N170CV1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Case Package:

SOT-227-4

Description:

IGBT Modules 1700V/85A High Voltage XPT IGBT

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Documentation:

IXYN30N170CV1 Datasheet (8 Pages)

IXYN30N170CV1 Datasheet PDF (8 Pages)

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IXYN30N170CV1 Specifications

TYPE

DESCRIPTION

Case/Package

SOT-227-4

Power Dissipation

680 W

Breakdown Voltage (Collector to Emitter)

1700 V

Reverse recovery time

160 ns

Input Power (Max)

680 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

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IXYN30N170CV1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXYN30N170CV1 Environmental

IXYN30N170CV1 Function Overview

IXYN30N170CV1 Documents

IXYN30N170CV1 Datasheet

IXYS Semiconductor

8 Pages / 0.2 MByte

IXYN30N170CV1 Other Datasheet PDF

IXYS Semiconductor

7 Pages / 0.2 MByte

IXYN30N170 Documents

IXYN30N170CV1 Datasheet PDF

IXYS Semiconductor

IGBT Modules 1700V/85A High Voltage XPT IGBT

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