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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP14N60P Datasheet PDF
IXTP14N60P
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IXTP14N60P Datasheet PDF (5 Pages)
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IXTP14N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
14.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
450 mΩ
Power Dissipation
300 W
Threshold Voltage
5.5 V
Input Capacitance
2.30 nF
Gate Charge
36.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
14.0 A
Rise Time
27 ns
Input Capacitance (Ciss)
2500pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
300W (Tc)

IXTP14N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
16 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP14N60P Documents

IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
5 Pages / 0.14 MByte

IXTP14N60 Documents

IXYS Semiconductor
Trans MOSFET P-CH 600V 14A 3Pin(3+Tab) TO-220
IXYS Semiconductor
TO-220 N-CH 600V 7A
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