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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN660N04T4 Datasheet PDF
IXTN660N04T4
$ 26.288

IXTN660N04T4 Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
SOT-227-4
Description:
Trans MOSFET N-CH 40V 660A 4Pin SOT-227B Tube
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IXTN660N04T4 Datasheet (6 Pages)

IXTN660N04T4 Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
850 mΩ
Power Dissipation
1.04 kW
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Rise Time
430 ns
Reverse recovery time
60 ns
Maximum Forward Voltage (Max)
1.4 V
Input Capacitance (Ciss)
44000pF @25V(Vds)
Fall Time
260 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1040W (Tc)
View Datasheet >

IXTN660N04T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)
View Datasheet >

IXTN660N04T4 Documents

IXTN660N04T4 Datasheet
IXYS Semiconductor
6 Pages / 0.17 MByte
IXTN660N04T4 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.16 MByte

IXTN660N04 Documents

IXTN660N04T4 Datasheet PDF
IXYS Semiconductor
Trans MOSFET N-CH 40V 660A 4Pin SOT-227B Tube
IXTN660N04T4 Datasheet PDF
Littelfuse
Power Field-Effect Transistor,
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