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IXTF1R4N450 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

i4-Pac

Description:

2500V TO 4500V VERY HI VOLT PWR

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IXTF1R4N450 Datasheet PDF (5 Pages)

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IXTF1R4N450 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

i4-Pac

Power Dissipation

190W (Tc)

Drain to Source Voltage (Vds)

4500 V

Input Capacitance (Ciss)

3300pF @25V(Vds)

Power Dissipation (Max)

190W (Tc)

IXTF1R4N450 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXTF1R4N450 Environmental

IXTF1R4N450 Function Overview

IXTF1R4N450 Documents

IXTF1R4N450 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.18 MByte

IXTF1R4 Documents

IXTF1R4N450 Datasheet PDF

IXYS Semiconductor

2500V TO 4500V VERY HI VOLT PWR

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