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IXTA10N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-263-3

Description:

Trans MOSFET N-CH 600V 10A 3Pin(2+Tab) D2PAK

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Documentation:

IXTA10N60P Datasheet (4 Pages)

IXTA10N60P Datasheet PDF (4 Pages)

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IXTA10N60P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

10.0 A

Case/Package

TO-263-3

Power Dissipation

200W (Tc)

Input Capacitance

1.61 nF

Gate Charge

32.0 nC

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

10.0 A

Input Capacitance (Ciss)

1610pF @25V(Vds)

Power Dissipation (Max)

200W (Tc)

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IXTA10N60P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTA10N60P Environmental

IXTA10N60P Function Overview

IXTA10N60P Documents

IXTA10N60P Datasheet

IXYS Semiconductor

4 Pages / 0.15 MByte

IXTA10N60P Other Datasheet PDF

IXYS Semiconductor

4 Pages / 0.14 MByte

IXTA10N60 Documents

IXTA10N60P Datasheet PDF

IXYS Semiconductor

Trans MOSFET N-CH 600V 10A 3Pin(2+Tab) D2PAK

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