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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGA30N60C3C1 Datasheet PDF
IXGA30N60C3C1
$ 1.465
IXGA30N60C3C1 Datasheet PDF (7 Pages)
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IXGA30N60C3C1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
220 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
220 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
220000 mW

IXGA30N60C3C1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
9.65 mm
Size-Width
10.41 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGA30N60C3C1 Documents

IXYS Semiconductor
7 Pages / 0.27 MByte
IXYS Semiconductor
7 Pages / 0.27 MByte

IXGA30N60C3 Documents

IXYS Semiconductor
GenX™ 600V IGBT
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGA30N60C3C1 IGBT Single Transistor, SIC, 60A, 3V, 220W, 600V, TO-263, 3Pins
IXYS Semiconductor
Igbt 600V 60A 220W To263
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