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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX32N100P Datasheet PDF
IXFX32N100P
$ 18.383
IXFX32N100P Datasheet PDF (4 Pages)
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IXFX32N100P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Power Dissipation
960W (Tc)
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
1000 V
Rise Time
55 ns
Input Capacitance (Ciss)
14200pF @25V(Vds)
Fall Time
43 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
960W (Tc)

IXFX32N100P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.21 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX32N100P Documents

IXYS Semiconductor
4 Pages / 0.11 MByte

IXFX32N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 32A 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
PLUS N-CH 1000V 32A
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