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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX120N30T Datasheet PDF
IXFX120N30T
$ 12.969

IXFX120N30T Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-247-3
Description:
PLUS N-CH 300V 120A
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Documentation:
IXFX120N30T Datasheet (5 Pages)
IXFX120N30T Datasheet PDF (5 Pages)
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IXFX120N30T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
24 mΩ
Polarity
N-CH
Power Dissipation
960 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
120A
Rise Time
31 ns
Input Capacitance (Ciss)
20000pF @25V(Vds)
Input Power (Max)
960 W
Fall Time
23 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
960W (Tc)
View Datasheet >

IXFX120N30T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXFX120N30T Documents

IXFX120N30T Datasheet
IXYS Semiconductor
5 Pages / 0.13 MByte

IXFX120N30 Documents

IXFX120N30T Datasheet PDF
IXYS Semiconductor
PLUS N-CH 300V 120A
IXFX120N30P3 Datasheet PDF
IXYS Semiconductor
PLUS N-CH 300V 120A
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