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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFT86N30T Datasheet PDF
IXFT86N30T
$ 9.225

IXFT86N30T Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-268-3
Description:
TO-268 N-CH 300V 86A
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Documentation:
IXFT86N30T Datasheet (6 Pages)
IXFT86N30T Datasheet PDF (6 Pages)
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IXFT86N30T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-268-3
Drain to Source Resistance (on) (Rds)
43 mΩ
Polarity
N-CH
Power Dissipation
830 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
86A
Rise Time
18 ns
Input Capacitance (Ciss)
11300pF @25V(Vds)
Input Power (Max)
830 W
Fall Time
54 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
860W (Tc)
View Datasheet >

IXFT86N30T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.05 mm
Size-Width
14 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXFT86N30T Documents

IXFT86N30T Datasheet
IXYS Semiconductor
6 Pages / 0.18 MByte
IXFT86N30T Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.16 MByte

IXFT86N30 Documents

IXFT86N30T Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 300V 86A
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