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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFR80N50Q3 Datasheet PDF
IXFR80N50Q3
$ 20.001
IXFR80N50Q3 Datasheet PDF (6 Pages)
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IXFR80N50Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Polarity
N-CH
Power Dissipation
570 W
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
50A
Rise Time
20 ns
Input Capacitance (Ciss)
10000pF @25V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
570W (Tc)

IXFR80N50Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFR80N50Q3 Documents

IXYS Semiconductor
6 Pages / 0.14 MByte
IXYS Semiconductor
5 Pages / 0.14 MByte

IXFR80N50 Documents

IXYS Semiconductor
ISOPLUS N-CH 500V 50A
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFR80N50P MOSFET Transistor, N Channel, 45A, 500V, 72mohm, 10V, 5V
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