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IXFN62N80Q3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 800V 49A

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Documentation:

IXFN62N80Q3 Datasheet (5 Pages)

IXFN62N80Q3 Datasheet PDF (5 Pages)

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IXFN62N80Q3 Specifications

TYPE

DESCRIPTION

Number of Pins

4 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Polarity

N-CH

Power Dissipation

960 W

Drain to Source Voltage (Vds)

800 V

Continuous Drain Current (Ids)

49A

Rise Time

20 ns

Input Capacitance (Ciss)

13600pF @25V(Vds)

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

960W (Tc)

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IXFN62N80Q3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

38.23 mm

Size-Width

25.07 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN62N80Q3 Environmental

IXFN62N80Q3 Function Overview

IXFN62N80Q3 Documents

IXFN62N80Q3 Datasheet

IXYS Semiconductor

5 Pages / 0.12 MByte

IXFN62N80Q3 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.12 MByte

IXFN62N80 Documents

IXFN62N80Q3 Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 800V 49A

IXFN62N80Q3 Datasheet PDF

Littelfuse

Power Field-Effect Transistor,

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