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IXFN360N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 100V 360A

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Documentation:

IXFN360N10T Datasheet (7 Pages)

IXFN360N10T Datasheet PDF (7 Pages)

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IXFN360N10T Specifications

TYPE

DESCRIPTION

Number of Pins

4 Pin

Case/Package

SOT-227-4

Drain to Source Resistance (on) (Rds)

0.0026 Ω

Polarity

N-CH

Power Dissipation

830 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

360A

Rise Time

142 ns

Input Capacitance (Ciss)

36000pF @25V(Vds)

Fall Time

26 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

830W (Tc)

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IXFN360N10T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXFN360N10T Environmental

IXFN360N10T Function Overview

IXFN360N10T Documents

IXFN360N10T Datasheet

IXYS Semiconductor

7 Pages / 0.17 MByte

IXFN360N10T Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.17 MByte

IXFN360N10 Documents

IXFN360N10T Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 100V 360A

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