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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN27N80Q Datasheet PDF
IXFN27N80Q
$ 25.073
IXFN27N80Q Datasheet PDF (2 Pages)
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IXFN27N80Q Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.32 Ω
Polarity
N-Channel
Power Dissipation
520 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
27.0 A
Rise Time
28 ns
Isolation Voltage
2.50 kV
Input Capacitance (Ciss)
7600pF @25V(Vds)
Input Power (Max)
520 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
520W (Tc)

IXFN27N80Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Weight
40.0 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN27N80Q Documents

IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN27N80 Documents

IXYS Semiconductor
SOT-227B N-CH 800V 27A
IXYS Semiconductor
SOT-227B N-CH 800V 27A
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