$ 13.601

IXFK48N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-264-3

Description:

Single N-Channel 600V 830W 150NC Through Hole Power Mosfet - TO-264

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IXFK48N60P Datasheet (4 Pages)IXFK48N60P Application Note (6 Pages)

IXFK48N60P Datasheet PDF (4 Pages)

View Datasheet

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IXFK48N60P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

48.0 A

Case/Package

TO-264-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.135 Ω

Polarity

N-Channel

Power Dissipation

830 W

Threshold Voltage

5 V

Input Capacitance

8.86 nF

Gate Charge

150 nC

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

48.0 A

Rise Time

25 ns

Input Capacitance (Ciss)

8860pF @25V(Vds)

Input Power (Max)

830 W

Fall Time

22 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

830W (Tc)

View Datasheet >

IXFK48N60P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Length

19.96 mm

Size-Width

5.13 mm

Size-Height

26.16 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IXFK48N60P Environmental

IXFK48N60P Function Overview

IXFK48N60P Documents

IXFK48N60P Datasheet

IXYS Semiconductor

4 Pages / 0.21 MByte

IXFK48N60P Other Datasheet PDF

IXYS Semiconductor

4 Pages / 0.21 MByte

IXFK48N60P Application Note

IXYS Semiconductor

6 Pages / 1.89 MByte

IXFK48N60 Documents

IXFK48N60P Datasheet PDF

IXYS Semiconductor

Single N-Channel 600V 830W 150NC Through Hole Power Mosfet - TO-264

IXFK48N60Q3 Datasheet PDF

IXYS Semiconductor

MOSFET N-CH 600V 48A TO-264

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