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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFK26N60Q Datasheet PDF
IXFK26N60Q
$ 8.93

IXFK26N60Q Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-264-3
Description:
TO-264AA N-CH 600V 26A
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Documentation:
IXFK26N60Q Datasheet (2 Pages)
IXFK26N60Q Datasheet PDF (2 Pages)
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IXFK26N60Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-264-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
250 mΩ
Polarity
N-CH
Power Dissipation
360 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
26A
Rise Time
32 ns
Input Capacitance (Ciss)
5100pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
360W (Tc)
View Datasheet >

IXFK26N60Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
19.96 mm
Size-Width
5.13 mm
Size-Height
26.16 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXFK26N60Q Documents

IXFK26N60Q Datasheet
IXYS Semiconductor
2 Pages / 0.1 MByte
IXFK26N60Q Other Datasheet PDF
IXYS Semiconductor
2 Pages / 0.1 MByte

IXFK26N60 Documents

IXFK26N60Q Datasheet PDF
IXYS Semiconductor
TO-264AA N-CH 600V 26A
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