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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFA12N50P Datasheet PDF
IXFA12N50P
$ 1.672
IXFA12N50P Datasheet PDF (5 Pages)
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IXFA12N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
12.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
500 mΩ
Polarity
N-Channel
Power Dissipation
200 W
Threshold Voltage
5.5 V
Input Capacitance
1.69 nF
Gate Charge
29.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
27 ns
Input Capacitance (Ciss)
1830pF @25V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
200W (Tc)

IXFA12N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
16 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFA12N50P Documents

IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFA12N50 Documents

IXYS Semiconductor
Single N-Channel 500V 200W 29NC Surface Mount Power Mosfet - TO-263
IXYS Semiconductor
N-Channel 500V 12A 500mΩ Surface Mount Polar HiPerFET Power Mosfet - D2PAK
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