$ 17

IXBH28N170A Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

MOSFET N-CH 1700V 30A TO-247AD

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IXBH28N170A Datasheet (2 Pages)

IXBH28N170A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-247-3

Breakdown Voltage (Collector to Emitter)

1700 V

Reverse recovery time

360 ns

Input Power (Max)

300 W

View Datasheet >

IXBH28N170A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBH28N170A Environmental

IXBH28N170A Function Overview

IXBH28N170A Documents

IXBH28N170A Datasheet

IXYS Semiconductor

2 Pages / 0.06 MByte

IXBH28N170A Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.06 MByte

IXBH28N170 Documents

IXBH28N170A Datasheet PDF

IXYS Semiconductor

MOSFET N-CH 1700V 30A TO-247AD

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