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ISL9N318AD3ST Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-252

Description:

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

ISL9N318AD3ST Datasheet (11 Pages)

ISL9N318AD3ST Datasheet PDF (11 Pages)

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ISL9N318AD3ST Specifications

TYPE

DESCRIPTION

Case/Package

TO-252

Drain to Source Resistance (on) (Rds)

18.0 mΩ

Polarity

N-Channel

Power Dissipation

55 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

30.0 A

Fall Time

28 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

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ISL9N318AD3ST Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tape & Reel (TR)

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ISL9N318AD3ST Environmental

ISL9N318AD3ST Documents

ISL9N318AD3ST Datasheet

Fairchild

11 Pages / 0.29 MByte

ISL9N318AD3 Documents

ISL9N318AD3ST Datasheet PDF

Fairchild

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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